symbol v ds v gs i dm i ar e ar t j , t stg symbol ty p max 19.5 25 48 60 r jc 1 1.5 15 t a =70c 12 a repetitive avalanche energy l=0.3mh c 135 mj c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w gate-source voltage drain-source voltage maximum junction-to-case c steady-state continuous drain current g t a =25c i dsm t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current power dissipation b t c =25c a i d maximum junction-to-ambient a steady-state 85 70 200 avalanche current c 30 power dissipation a 2.5 w continuous drain current b maximum units parameter t c =25c g t c =100c 30 t a =70c 1.6 w junction and storage temperature range p d c 100 50 -55 to 175 t c =100c AOL1418 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 6.5m ? (v gs = 10v) r ds(on) < 10.5m ? (v gs = 4.5v) general description the AOL1418 uses advanced trench technology to provide excellent r ds(on) , low gate chargeand low gate resistance. this device is ideally suited for use as a high side switch in cpu core power conversion. standard product AOL1418 is pb-free (meets rohs & sony 259 specifications). AOL1418l is a green product ordering option. AOL1418 and AOL1418l are electrically identical. g d s ultra so-8 tm top view bottom tab connected to drain fits soic8 footprint ! s g d alpha & omega semiconductor, ltd.
AOL1418 symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(th) 1 2.2 3 v i d(on) 100 a 5 6.5 t j =125c 6.7 8.1 8.3 10.5 m q g (10v) 26 32 nc q g (4.5v) 13.3 16.2 nc q gs 3.2 nc q gd 6.6 nc t d(on) 7.2 10 ns t r 12.5 18 ns t d(off) 22 33 ns t f 69ns t rr 29.7 36 ns q rr 29 36 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation pd is based on tj(max)=175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature tj(max)=175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of tj(max)=175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating. rev1: dec 2005 alpha & omega semiconductor, ltd.
AOL1418 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 4 5 6 7 8 9 10 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 4 8 12 16 20 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd.
AOL1418 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note h) 100 ja .r ja r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 alpha & omega semiconductor, ltd.
AOL1418 typical electrical and thermal characteristics 0 20 40 60 80 100 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 30 60 90 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd.
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